NCE60N1K0R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60N1K0R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 1.82 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: SOT223

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NCE60N1K0R datasheet

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 nce60n1k0r.pdf pdf_icon

NCE60N1K0R

NCE60N1K0R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 5.1. Size:749K  ncepower
 nce60n1k0d.pdf pdf_icon

NCE60N1K0R

NCE60N1K0D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 5.2. Size:771K  ncepower
 nce60n1k0i.pdf pdf_icon

NCE60N1K0R

NCE60N1K0I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 5.3. Size:752K  ncepower
 nce60n1k0k.pdf pdf_icon

NCE60N1K0R

NCE60N1K0K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE60H15T, NCE60H18, NCE60H28LL, NCE60H30T, NCE60N1K0D, NCE60N1K0F, NCE60N1K0I, NCE60N1K0K, 60N06, NCE60N2K1D, NCE60N2K1F, NCE60N2K1I, NCE60N2K1K, NCE60N2K1R, NCE60N370K, NCE60N390, NCE60N390D