Справочник MOSFET. NCE60N1K0R

 

NCE60N1K0R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE60N1K0R
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 5.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 4.3 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 8.5 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 1.82 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для NCE60N1K0R

 

 

NCE60N1K0R Datasheet (PDF)

 ..1. Size:757K  ncepower
 nce60n1k0r.pdf

NCE60N1K0R NCE60N1K0R

NCE60N1K0RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.1. Size:749K  ncepower
 nce60n1k0d.pdf

NCE60N1K0R NCE60N1K0R

NCE60N1K0DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.2. Size:771K  ncepower
 nce60n1k0i.pdf

NCE60N1K0R NCE60N1K0R

NCE60N1K0IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.3. Size:752K  ncepower
 nce60n1k0k.pdf

NCE60N1K0R NCE60N1K0R

NCE60N1K0KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.4. Size:740K  ncepower
 nce60n1k0f.pdf

NCE60N1K0R NCE60N1K0R

NCE60N1K0FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

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