All MOSFET. NCE60N1K0R Datasheet

 

NCE60N1K0R Datasheet and Replacement


   Type Designator: NCE60N1K0R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1.82 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT223
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NCE60N1K0R Datasheet (PDF)

 ..1. Size:757K  ncepower
 nce60n1k0r.pdf pdf_icon

NCE60N1K0R

NCE60N1K0RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.1. Size:749K  ncepower
 nce60n1k0d.pdf pdf_icon

NCE60N1K0R

NCE60N1K0DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.2. Size:771K  ncepower
 nce60n1k0i.pdf pdf_icon

NCE60N1K0R

NCE60N1K0IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

 5.3. Size:752K  ncepower
 nce60n1k0k.pdf pdf_icon

NCE60N1K0R

NCE60N1K0KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

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History: NCEP12N12 | 12N60L-TF2-T | FTK8N80F | IXFN27N80Q | TTD30P10AT | NTMFS4H01N | 4N70G-TM3-T

Keywords - NCE60N1K0R MOSFET datasheet

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