NCE60N2K1D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60N2K1D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 19 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 17.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm

Encapsulados: TO263

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NCE60N2K1D datasheet

 ..1. Size:713K  ncepower
 nce60n2k1d.pdf pdf_icon

NCE60N2K1D

NCE60N2K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 5.1. Size:737K  ncepower
 nce60n2k1f.pdf pdf_icon

NCE60N2K1D

NCE60N2K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 5.2. Size:755K  ncepower
 nce60n2k1r.pdf pdf_icon

NCE60N2K1D

NCE60N2K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 5.3. Size:717K  ncepower
 nce60n2k1k.pdf pdf_icon

NCE60N2K1D

NCE60N2K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

MOSTRAR MÁS

Otros transistores... NCE60H18, NCE60H28LL, NCE60H30T, NCE60N1K0D, NCE60N1K0F, NCE60N1K0I, NCE60N1K0K, NCE60N1K0R, IRFP064N, NCE60N2K1F, NCE60N2K1I, NCE60N2K1K, NCE60N2K1R, NCE60N370K, NCE60N390, NCE60N390D, NCE60N390F