NCE60N2K1D - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCE60N2K1D
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 19 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 17.3 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.1 Ohm
Тип корпуса: TO263
Аналог (замена) для NCE60N2K1D
NCE60N2K1D Datasheet (PDF)
nce60n2k1d.pdf

NCE60N2K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1f.pdf

NCE60N2K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1r.pdf

NCE60N2K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1k.pdf

NCE60N2K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
Другие MOSFET... NCE60H18 , NCE60H28LL , NCE60H30T , NCE60N1K0D , NCE60N1K0F , NCE60N1K0I , NCE60N1K0K , NCE60N1K0R , 5N50 , NCE60N2K1F , NCE60N2K1I , NCE60N2K1K , NCE60N2K1R , NCE60N370K , NCE60N390 , NCE60N390D , NCE60N390F .
History: P1060ETFS | RJK1536DPE | IPB100N06S3-04 | PK632BA | PK636BA | RJK0703DPN-E0 | RJK2557DPA
History: P1060ETFS | RJK1536DPE | IPB100N06S3-04 | PK632BA | PK636BA | RJK0703DPN-E0 | RJK2557DPA



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