NCE60N2K1D Specs and Replacement
Type Designator: NCE60N2K1D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 17.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO263
NCE60N2K1D substitution
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NCE60N2K1D datasheet
nce60n2k1d.pdf
NCE60N2K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒
nce60n2k1f.pdf
NCE60N2K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒
nce60n2k1r.pdf
NCE60N2K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒
nce60n2k1k.pdf
NCE60N2K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒
Detailed specifications: NCE60H18, NCE60H28LL, NCE60H30T, NCE60N1K0D, NCE60N1K0F, NCE60N1K0I, NCE60N1K0K, NCE60N1K0R, IRFP064N, NCE60N2K1F, NCE60N2K1I, NCE60N2K1K, NCE60N2K1R, NCE60N370K, NCE60N390, NCE60N390D, NCE60N390F
Keywords - NCE60N2K1D MOSFET specs
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