NCE60N640 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60N640

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 12 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.64 Ohm

Encapsulados: TO-220

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NCE60N640 datasheet

 ..1. Size:800K  ncepower
 nce60n640.pdf pdf_icon

NCE60N640

NCE60N640 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indust

 0.1. Size:814K  ncepower
 nce60n640f.pdf pdf_icon

NCE60N640

NCE60N640F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 0.2. Size:793K  ncepower
 nce60n640k.pdf pdf_icon

NCE60N640

NCE60N640K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 0.3. Size:808K  ncepower
 nce60n640i.pdf pdf_icon

NCE60N640

NCE60N640I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE60N2K1K, NCE60N2K1R, NCE60N370K, NCE60N390, NCE60N390D, NCE60N390F, NCE60N390I, NCE60N390K, IRFP460, NCE60N640D, NCE60N640F, NCE60N640I, NCE60N640K, NCE60N670F, NCE60N670K, NCE60N700D, NCE60N700F