Справочник MOSFET. NCE60N640

 

NCE60N640 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60N640
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 12 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.64 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCE60N640

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60N640 Datasheet (PDF)

 ..1. Size:800K  ncepower
 nce60n640.pdf pdf_icon

NCE60N640

NCE60N640N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indust

 0.1. Size:814K  ncepower
 nce60n640f.pdf pdf_icon

NCE60N640

NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 0.2. Size:793K  ncepower
 nce60n640k.pdf pdf_icon

NCE60N640

NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 0.3. Size:808K  ncepower
 nce60n640i.pdf pdf_icon

NCE60N640

NCE60N640IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60N2K1K , NCE60N2K1R , NCE60N370K , NCE60N390 , NCE60N390D , NCE60N390F , NCE60N390I , NCE60N390K , IRF640 , NCE60N640D , NCE60N640F , NCE60N640I , NCE60N640K , NCE60N670F , NCE60N670K , NCE60N700D , NCE60N700F .

History: IRF7811APBF | TPCS8009-H | HGS098N10SL | TSM5NB50CZ | FMV10N60E | STP22NS25Z | LSGH08R060W3

 

 
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