NCE60N640 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE60N640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 12 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
Package: TO-220
NCE60N640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE60N640 Datasheet (PDF)
nce60n640.pdf
NCE60N640N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indust
nce60n640f.pdf
NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus
nce60n640k.pdf
NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus
nce60n640i.pdf
NCE60N640IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus
nce60n640d.pdf
NCE60N640DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 5N65M | DMN60H4D5SK3
