NCE60ND45XG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60ND45XG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 181 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de MOSFET NCE60ND45XG
NCE60ND45XG Datasheet (PDF)
nce60nd45xg.pdf
NCE60ND45XGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 60V,I =45ADS DThe NCE60ND45XG uses advanced trench technology andR
nce60nd45ag.pdf
NCE60ND45AGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND45AG uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =60V,I =45ADS(ON) DS Dbe used in a wide variety of applications. R =9.4m (typical) @ V =10VDS(ON) GSR =13.4m (typical) @ V =4.5VApplication DS(ON) GS
nce60nd45g.pdf
NCE60ND45Ghttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)
nce60nd03n.pdf
http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR
nce60nd18g.pdf
Pb Free Producthttp://www.ncepower.comNCE60ND18GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND18G uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =18ADS DSchematic diagramR
nce60nd08s.pdf
http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR
nce60nd03s.pdf
http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR
nce60nd09as.pdf
NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)
nce60nd20ak.pdf
Pb Free Producthttp://www.ncepower.comNCE60ND20AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND20AK uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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