NCE60ND45XG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE60ND45XG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 181 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCE60ND45XG
NCE60ND45XG Datasheet (PDF)
nce60nd45xg.pdf
NCE60ND45XGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 60V,I =45ADS DThe NCE60ND45XG uses advanced trench technology andR
nce60nd45ag.pdf
NCE60ND45AGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND45AG uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =60V,I =45ADS(ON) DS Dbe used in a wide variety of applications. R =9.4m (typical) @ V =10VDS(ON) GSR =13.4m (typical) @ V =4.5VApplication DS(ON) GS
nce60nd45g.pdf
NCE60ND45Ghttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)
nce60nd03n.pdf
http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR
nce60nd18g.pdf
Pb Free Producthttp://www.ncepower.comNCE60ND18GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND18G uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =18ADS DSchematic diagramR
nce60nd08s.pdf
http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR
nce60nd03s.pdf
http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR
nce60nd09as.pdf
NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)
nce60nd20ak.pdf
Pb Free Producthttp://www.ncepower.comNCE60ND20AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND20AK uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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