All MOSFET. NCE60ND45XG Datasheet

 

NCE60ND45XG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60ND45XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6-8L

 NCE60ND45XG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60ND45XG Datasheet (PDF)

 ..1. Size:614K  ncepower
 nce60nd45xg.pdf

NCE60ND45XG NCE60ND45XG

NCE60ND45XGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 60V,I =45ADS DThe NCE60ND45XG uses advanced trench technology andR

 5.1. Size:616K  ncepower
 nce60nd45ag.pdf

NCE60ND45XG NCE60ND45XG

NCE60ND45AGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND45AG uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =60V,I =45ADS(ON) DS Dbe used in a wide variety of applications. R =9.4m (typical) @ V =10VDS(ON) GSR =13.4m (typical) @ V =4.5VApplication DS(ON) GS

 5.2. Size:341K  ncepower
 nce60nd45g.pdf

NCE60ND45XG NCE60ND45XG

NCE60ND45Ghttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)

 7.1. Size:643K  ncepower
 nce60nd03n.pdf

NCE60ND45XG NCE60ND45XG

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 7.2. Size:684K  ncepower
 nce60nd18g.pdf

NCE60ND45XG NCE60ND45XG

Pb Free Producthttp://www.ncepower.comNCE60ND18GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND18G uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =18ADS DSchematic diagramR

 7.3. Size:405K  ncepower
 nce60nd08s.pdf

NCE60ND45XG NCE60ND45XG

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR

 7.4. Size:659K  ncepower
 nce60nd03s.pdf

NCE60ND45XG NCE60ND45XG

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 7.5. Size:416K  ncepower
 nce60nd09as.pdf

NCE60ND45XG NCE60ND45XG

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

 7.6. Size:658K  ncepower
 nce60nd20ak.pdf

NCE60ND45XG NCE60ND45XG

Pb Free Producthttp://www.ncepower.comNCE60ND20AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND20AK uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RQ1A070AP | AFP9565S | AP9964GM

 

 
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