NCE60NF200I Todos los transistores

 

NCE60NF200I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60NF200I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO-251
 

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NCE60NF200I Datasheet (PDF)

 ..1. Size:679K  ncepower
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NCE60NF200I

NCE60NF200IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.1. Size:686K  ncepower
nce60nf200k.pdf pdf_icon

NCE60NF200I

NCE60NF200KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.2. Size:697K  ncepower
nce60nf200f.pdf pdf_icon

NCE60NF200I

NCE60NF200FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.3. Size:716K  ncepower
nce60nf200d.pdf pdf_icon

NCE60NF200I

NCE60NF200DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

Otros transistores... NCE60NF110 , NCE60NF110F , NCE60NF160K , NCE60NF160T , NCE60NF160V , NCE60NF200 , NCE60NF200D , NCE60NF200F , AON7410 , NCE60NF200K , NCE60NF260 , NCE60NF260D , NCE60NF260F , NCE60NF260I , NCE60NF260K , NCE60NF730D , NCE60NF730F .

History: 7N65KG-TA3-T | APQ16SN06AB

 

 
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History: 7N65KG-TA3-T | APQ16SN06AB

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