NCE60NF200I Specs and Replacement

Type Designator: NCE60NF200I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-251

NCE60NF200I substitution

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NCE60NF200I datasheet

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NCE60NF200I

NCE60NF200I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust... See More ⇒

 4.1. Size:686K  ncepower
 nce60nf200k.pdf pdf_icon

NCE60NF200I

NCE60NF200K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust... See More ⇒

 4.2. Size:697K  ncepower
 nce60nf200f.pdf pdf_icon

NCE60NF200I

NCE60NF200F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust... See More ⇒

 4.3. Size:716K  ncepower
 nce60nf200d.pdf pdf_icon

NCE60NF200I

NCE60NF200D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust... See More ⇒

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Detailed specifications: NCE60NF110, NCE60NF110F, NCE60NF160K, NCE60NF160T, NCE60NF160V, NCE60NF200, NCE60NF200D, NCE60NF200F, AON7410, NCE60NF200K, NCE60NF260, NCE60NF260D, NCE60NF260F, NCE60NF260I, NCE60NF260K, NCE60NF730D, NCE60NF730F

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