NCE60NF200I - аналоги и даташиты транзистора

 

NCE60NF200I - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE60NF200I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для NCE60NF200I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60NF200I Datasheet (PDF)

 ..1. Size:679K  ncepower
 nce60nf200i.pdf pdf_icon

NCE60NF200I

NCE60NF200IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.1. Size:686K  ncepower
 nce60nf200k.pdf pdf_icon

NCE60NF200I

NCE60NF200KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.2. Size:697K  ncepower
 nce60nf200f.pdf pdf_icon

NCE60NF200I

NCE60NF200FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.3. Size:716K  ncepower
 nce60nf200d.pdf pdf_icon

NCE60NF200I

NCE60NF200DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60NF110 , NCE60NF110F , NCE60NF160K , NCE60NF160T , NCE60NF160V , NCE60NF200 , NCE60NF200D , NCE60NF200F , 5N60 , NCE60NF200K , NCE60NF260 , NCE60NF260D , NCE60NF260F , NCE60NF260I , NCE60NF260K , NCE60NF730D , NCE60NF730F .

History: HTD160P04 | IPP60R950C6 | SIE800DF | STQ1HN60K3-AP | HTD1K5N10 | 9N90G-TC3-T

 

 
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