NCE60NF730I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NF730I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.1 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 23 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm

Encapsulados: TO-251

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NCE60NF730I datasheet

 ..1. Size:665K  ncepower
 nce60nf730i.pdf pdf_icon

NCE60NF730I

NCE60NF730I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 4.1. Size:673K  ncepower
 nce60nf730k.pdf pdf_icon

NCE60NF730I

NCE60NF730K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 4.2. Size:715K  ncepower
 nce60nf730r.pdf pdf_icon

NCE60NF730I

NCE60NF730R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 4.3. Size:702K  ncepower
 nce60nf730d.pdf pdf_icon

NCE60NF730I

NCE60NF730D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

MOSTRAR MÁS

Otros transistores... NCE60NF200K, NCE60NF260, NCE60NF260D, NCE60NF260F, NCE60NF260I, NCE60NF260K, NCE60NF730D, NCE60NF730F, AON7506, NCE60NF730K, NCE60NF730R, NCE60NP09S, NCE60NP1515K, NCE60NP2012K, NCE60NP2016G, NCE60NP4035K, NCE60P02Y