NCE60NF730I. Аналоги и основные параметры

Наименование производителя: NCE60NF730I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 68 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.1 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 23 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.73 Ohm

Тип корпуса: TO-251

Аналог (замена) для NCE60NF730I

- подборⓘ MOSFET транзистора по параметрам

 

NCE60NF730I даташит

 ..1. Size:665K  ncepower
 nce60nf730i.pdf pdf_icon

NCE60NF730I

NCE60NF730I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 4.1. Size:673K  ncepower
 nce60nf730k.pdf pdf_icon

NCE60NF730I

NCE60NF730K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 4.2. Size:715K  ncepower
 nce60nf730r.pdf pdf_icon

NCE60NF730I

NCE60NF730R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 4.3. Size:702K  ncepower
 nce60nf730d.pdf pdf_icon

NCE60NF730I

NCE60NF730D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

ПОКАЗАТЬ ЕЩЁ

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