All MOSFET. NCE60NF730I Datasheet

 

NCE60NF730I MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60NF730I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9.4 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO-251

 NCE60NF730I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60NF730I Datasheet (PDF)

 ..1. Size:665K  ncepower
nce60nf730i.pdf

NCE60NF730I
NCE60NF730I

NCE60NF730IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

 4.1. Size:673K  ncepower
nce60nf730k.pdf

NCE60NF730I
NCE60NF730I

NCE60NF730KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

 4.2. Size:715K  ncepower
nce60nf730r.pdf

NCE60NF730I
NCE60NF730I

NCE60NF730RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

 4.3. Size:702K  ncepower
nce60nf730d.pdf

NCE60NF730I
NCE60NF730I

NCE60NF730DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

 4.4. Size:704K  ncepower
nce60nf730f.pdf

NCE60NF730I
NCE60NF730I

NCE60NF730FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KIA4N65H-251

 

 
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