NCE60NP1515K Todos los transistores

 

NCE60NP1515K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60NP1515K
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 42 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.071 Ohm
   Paquete / Cubierta: TO-252-4L
     - Selección de transistores por parámetros

 

NCE60NP1515K Datasheet (PDF)

 ..1. Size:854K  ncepower
 nce60np1515k.pdf pdf_icon

NCE60NP1515K

NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR

 7.1. Size:978K  ncepower
 nce60np4035k.pdf pdf_icon

NCE60NP1515K

NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR

 7.2. Size:913K  ncepower
 nce60np2012k.pdf pdf_icon

NCE60NP1515K

NCE60NP2012Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2012K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =20ADS DR

 7.3. Size:1011K  ncepower
 nce60np09s.pdf pdf_icon

NCE60NP1515K

NCE60NP09Shttp://www.ncepower.comNCE 60V Complementary MOSFETDescriptionThe NCE60NP09S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =9ADS DR

MOSTRAR MÁS

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History: WSD45P10DN56 | NVMFS020N06C | IPD12CN10NG | NCEAP40T17AD | WSD2012DN25 | STK28N3LLH5 | IRF7103PBF

 

 
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