NCE60NP1515K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NP1515K

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.6 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.071 Ohm

Encapsulados: TO-252-4L

 Búsqueda de reemplazo de NCE60NP1515K MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE60NP1515K datasheet

 ..1. Size:854K  ncepower
 nce60np1515k.pdf pdf_icon

NCE60NP1515K

NCE60NP1515K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =15A DS D R

 7.1. Size:978K  ncepower
 nce60np4035k.pdf pdf_icon

NCE60NP1515K

NCE60NP4035K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP4035K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =40A DS D R

 7.2. Size:913K  ncepower
 nce60np2012k.pdf pdf_icon

NCE60NP1515K

NCE60NP2012K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =20A DS D R

 7.3. Size:1011K  ncepower
 nce60np09s.pdf pdf_icon

NCE60NP1515K

NCE60NP09S http //www.ncepower.com NCE 60V Complementary MOSFET Description The NCE60NP09S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =9A DS D R

MOSTRAR MÁS

Otros transistores... NCE60NF260I, NCE60NF260K, NCE60NF730D, NCE60NF730F, NCE60NF730I, NCE60NF730K, NCE60NF730R, NCE60NP09S, AO4407, NCE60NP2012K, NCE60NP2016G, NCE60NP4035K, NCE60P02Y, NCE60P03R, NCE60P03Y, NCE60P04SN, NCE60P05BY