All MOSFET. NCE60NP1515K Datasheet

 

NCE60NP1515K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60NP1515K
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17.1 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: TO-252-4L

 NCE60NP1515K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60NP1515K Datasheet (PDF)

 ..1. Size:854K  ncepower
 nce60np1515k.pdf

NCE60NP1515K NCE60NP1515K

NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR

 7.1. Size:978K  ncepower
 nce60np4035k.pdf

NCE60NP1515K NCE60NP1515K

NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR

 7.2. Size:913K  ncepower
 nce60np2012k.pdf

NCE60NP1515K NCE60NP1515K

NCE60NP2012Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2012K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =20ADS DR

 7.3. Size:1011K  ncepower
 nce60np09s.pdf

NCE60NP1515K NCE60NP1515K

NCE60NP09Shttp://www.ncepower.comNCE 60V Complementary MOSFETDescriptionThe NCE60NP09S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =9ADS DR

 7.4. Size:993K  ncepower
 nce60np2016g.pdf

NCE60NP1515K NCE60NP1515K

Pb Free Producthttp://www.ncepower.comNCE60NP2016GNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2016G uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =20ADS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SDF4NA100SXH

 

 
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