NCE60NP1515K - аналоги и даташиты транзистора

 

NCE60NP1515K - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE60NP1515K
   Тип транзистора: MOSFET
   Полярность: NP
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 2.6 ns
   Cossⓘ - Выходная емкость: 42 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.071 Ohm
   Тип корпуса: TO-252-4L
 

 Аналог (замена) для NCE60NP1515K

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60NP1515K Datasheet (PDF)

 ..1. Size:854K  ncepower
 nce60np1515k.pdf pdf_icon

NCE60NP1515K

NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR

 7.1. Size:978K  ncepower
 nce60np4035k.pdf pdf_icon

NCE60NP1515K

NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR

 7.2. Size:913K  ncepower
 nce60np2012k.pdf pdf_icon

NCE60NP1515K

NCE60NP2012Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2012K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =20ADS DR

 7.3. Size:1011K  ncepower
 nce60np09s.pdf pdf_icon

NCE60NP1515K

NCE60NP09Shttp://www.ncepower.comNCE 60V Complementary MOSFETDescriptionThe NCE60NP09S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =9ADS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60NF260I , NCE60NF260K , NCE60NF730D , NCE60NF730F , NCE60NF730I , NCE60NF730K , NCE60NF730R , NCE60NP09S , P60NF06 , NCE60NP2012K , NCE60NP2016G , NCE60NP4035K , NCE60P02Y , NCE60P03R , NCE60P03Y , NCE60P04SN , NCE60P05BY .

History: 2SK3544 | STB190NF04-1

 

 
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