NCE60P05R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60P05R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 15.8 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 93.7 pF
Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de MOSFET NCE60P05R
NCE60P05R Datasheet (PDF)
nce60p05r.pdf
http://www.ncepower.com NCE60P05RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-5A Schematic diagram RDS(ON)
nce60p05n.pdf
http://www.ncepower.com NCE60P05NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)
nce60p05by.pdf
NCE60P05BYhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)
nce60p02y.pdf
NCE60P02Yhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P02Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-2A RDS(ON)
nce60p06s.pdf
http://www.ncepower.com NCE60P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON)
nce60p09s.pdf
NCE60P09Shttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)
nce60p08as.pdf
http://www.ncepower.com NCE60P08ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P08AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-8A RDS(ON)
nce60p03r.pdf
http://www.ncepower.com NCE60P03RNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P03R uses advanced trench technology and design V =-60V,I =-3ADS Dto provide excellent R with low gate charge .This device isDS(ON)R
nce60p04sn.pdf
NCE60P04SN http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-4A RDS(ON)
nce60p09as.pdf
NCE60P09AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)
nce60p07as.pdf
NCE60P07AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-7A Schematic diagram RDS(ON)
nce60p09k.pdf
http://www.ncepower.com NCE60P09KNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V =-60V,I =-9ADS DThe NCE60P09K uses advanced trench technology and designR
nce60p04y.pdf
Pb Free Producthttp://www.ncepower.com NCE60P04YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4A RDS(ON)
nce60p03y.pdf
NCE60P03YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-3A RDS(ON)
nce60p04r.pdf
Pb Free Producthttp://www.ncepower.com NCE60P04RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-4.3A Schematic diagram RDS(ON)
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
