Справочник MOSFET. NCE60P05R

 

NCE60P05R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE60P05R
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 3.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 15.8 nC
   Время нарастания (tr): 5 ns
   Выходная емкость (Cd): 93.7 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.085 Ohm
   Тип корпуса: SOT-223

 Аналог (замена) для NCE60P05R

 

 

NCE60P05R Datasheet (PDF)

 ..1. Size:492K  ncepower
nce60p05r.pdf

NCE60P05R
NCE60P05R

http://www.ncepower.com NCE60P05RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-5A Schematic diagram RDS(ON)

 6.1. Size:411K  ncepower
nce60p05n.pdf

NCE60P05R
NCE60P05R

http://www.ncepower.com NCE60P05NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)

 6.2. Size:376K  ncepower
nce60p05by.pdf

NCE60P05R
NCE60P05R

NCE60P05BYhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)

 7.1. Size:408K  ncepower
nce60p02y.pdf

NCE60P05R
NCE60P05R

NCE60P02Yhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P02Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-2A RDS(ON)

 7.2. Size:364K  ncepower
nce60p06s.pdf

NCE60P05R
NCE60P05R

http://www.ncepower.com NCE60P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON)

 7.3. Size:285K  ncepower
nce60p09s.pdf

NCE60P05R
NCE60P05R

NCE60P09Shttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

 7.4. Size:409K  ncepower
nce60p08as.pdf

NCE60P05R
NCE60P05R

http://www.ncepower.com NCE60P08ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P08AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-8A RDS(ON)

 7.5. Size:656K  ncepower
nce60p03r.pdf

NCE60P05R
NCE60P05R

http://www.ncepower.com NCE60P03RNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P03R uses advanced trench technology and design V =-60V,I =-3ADS Dto provide excellent R with low gate charge .This device isDS(ON)R

 7.6. Size:358K  ncepower
nce60p04sn.pdf

NCE60P05R
NCE60P05R

NCE60P04SN http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-4A RDS(ON)

 7.7. Size:288K  ncepower
nce60p09as.pdf

NCE60P05R
NCE60P05R

NCE60P09AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

 7.8. Size:371K  ncepower
nce60p07as.pdf

NCE60P05R
NCE60P05R

NCE60P07AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-7A Schematic diagram RDS(ON)

 7.9. Size:655K  ncepower
nce60p09k.pdf

NCE60P05R
NCE60P05R

http://www.ncepower.com NCE60P09KNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V =-60V,I =-9ADS DThe NCE60P09K uses advanced trench technology and designR

 7.10. Size:344K  ncepower
nce60p04y.pdf

NCE60P05R
NCE60P05R

Pb Free Producthttp://www.ncepower.com NCE60P04YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4A RDS(ON)

 7.11. Size:353K  ncepower
nce60p03y.pdf

NCE60P05R
NCE60P05R

NCE60P03YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-3A RDS(ON)

 7.12. Size:333K  ncepower
nce60p04r.pdf

NCE60P05R
NCE60P05R

Pb Free Producthttp://www.ncepower.com NCE60P04RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-4.3A Schematic diagram RDS(ON)

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