NCE60P12AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60P12AS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 356 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: SOP8

 Búsqueda de reemplazo de NCE60P12AS MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE60P12AS datasheet

 ..1. Size:445K  ncepower
 nce60p12as.pdf pdf_icon

NCE60P12AS

NCE60P12AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON)

 6.1. Size:417K  ncepower
 nce60p12k.pdf pdf_icon

NCE60P12AS

 7.1. Size:410K  ncepower
 nce60p16aq.pdf pdf_icon

NCE60P12AS

http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R

 7.2. Size:418K  ncepower
 nce60p18ak.pdf pdf_icon

NCE60P12AS

MOSTRAR MÁS

Otros transistores... NCE60P04SN, NCE60P05BY, NCE60P05N, NCE60P05R, NCE60P07AS, NCE60P08AS, NCE60P09AS, NCE60P09K, STF13NM60N, NCE60P16AQ, NCE60P17AQ, NCE60P18AQ, NCE60P25, NCE60P28AK, NCE60P40F, NCE60P45AK, NCE60P50G