NCE60P12AS Specs and Replacement

Type Designator: NCE60P12AS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 356 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP8

NCE60P12AS substitution

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NCE60P12AS datasheet

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NCE60P12AS

NCE60P12AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON) ... See More ⇒

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NCE60P12AS

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NCE60P12AS

http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R ... See More ⇒

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NCE60P12AS

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Detailed specifications: NCE60P04SN, NCE60P05BY, NCE60P05N, NCE60P05R, NCE60P07AS, NCE60P08AS, NCE60P09AS, NCE60P09K, STF13NM60N, NCE60P16AQ, NCE60P17AQ, NCE60P18AQ, NCE60P25, NCE60P28AK, NCE60P40F, NCE60P45AK, NCE60P50G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.