All MOSFET. NCE60P12AS Datasheet

 

NCE60P12AS MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60P12AS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 62.1 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 356 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8

 NCE60P12AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60P12AS Datasheet (PDF)

 ..1. Size:445K  ncepower
 nce60p12as.pdf

NCE60P12AS NCE60P12AS

NCE60P12AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON)

 6.1. Size:417K  ncepower
 nce60p12k.pdf

NCE60P12AS NCE60P12AS

Pb Free Producthttp://www.ncepower.com NCE60P12KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-12A RDS(ON)

 7.1. Size:410K  ncepower
 nce60p16aq.pdf

NCE60P12AS NCE60P12AS

http://www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS Dor power management. R

 7.2. Size:418K  ncepower
 nce60p18ak.pdf

NCE60P12AS NCE60P12AS

Pb Free Producthttp://www.ncepower.com NCE60P18AKNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-18A RDS(ON)

 7.3. Size:624K  ncepower
 nce60p18aq.pdf

NCE60P12AS NCE60P12AS

NCE60P18AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -18ADS DThe NCE60P18AQ uses advanced trench technology to provideR

 7.4. Size:424K  ncepower
 nce60p10k.pdf

NCE60P12AS NCE60P12AS

Pb Free Producthttp://www.ncepower.com NCE60P10KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-10A RDS(ON)

 7.5. Size:445K  ncepower
 nce60p16ak.pdf

NCE60P12AS NCE60P12AS

NCE60P16AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-16A RDS(ON)

 7.6. Size:788K  ncepower
 nce60p14k.pdf

NCE60P12AS NCE60P12AS

NCE60P14Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P14K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.General FeaturesSchematic diagram V =-60V,I =-14ADS DR

 7.7. Size:414K  ncepower
 nce60p14ak.pdf

NCE60P12AS NCE60P12AS

NCE60P14AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P14AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-14A RDS(ON)

 7.8. Size:711K  ncepower
 nce60p17aq.pdf

NCE60P12AS NCE60P12AS

NCE60P17AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -17ADS DThe NCE60P17AQ uses advanced trench technology to provideR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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