NCE60T2K2K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60T2K2K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: TO-252

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NCE60T2K2K datasheet

 ..1. Size:457K  ncepower
 nce60t2k2k.pdf pdf_icon

NCE60T2K2K

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:457K  ncepower
 nce60t2k2i nce60t2k2k.pdf pdf_icon

NCE60T2K2K

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:457K  ncepower
 nce60t2k2i.pdf pdf_icon

NCE60T2K2K

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.1. Size:1652K  1
 nce60td65bt.pdf pdf_icon

NCE60T2K2K

PbFreeProduct NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

MOSTRAR MÁS

Otros transistores... NCE60P65K, NCE60P70D, NCE60P70G, NCE60P82A, NCE60P82AD, NCE60P82AK, NCE60PD05S, NCE60T2K2I, AON7403, NCE6525Q, NCE65N180, NCE65N180D, NCE65N180F, NCE65N180K, NCE65N180T, NCE65N180V, NCE65N1K2D