NCE60T2K2K - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCE60T2K2K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 21 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 8 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCE60T2K2K
NCE60T2K2K Datasheet (PDF)
nce60t2k2k.pdf

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60t2k2i nce60t2k2k.pdf

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60t2k2i.pdf

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60td65bt.pdf

PbFreeProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral Description:Using NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Другие MOSFET... NCE60P65K , NCE60P70D , NCE60P70G , NCE60P82A , NCE60P82AD , NCE60P82AK , NCE60PD05S , NCE60T2K2I , EMB04N03H , NCE6525Q , NCE65N180 , NCE65N180D , NCE65N180F , NCE65N180K , NCE65N180T , NCE65N180V , NCE65N1K2D .
History: NCE65N260F | BSB280N15NZ3G | DH060N03R | OSS60R099JF | LSGG04R028 | IRFN5210 | OSS60R099KF
History: NCE65N260F | BSB280N15NZ3G | DH060N03R | OSS60R099JF | LSGG04R028 | IRFN5210 | OSS60R099KF



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48