NCE60T2K2K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE60T2K2K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.5 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-252
NCE60T2K2K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE60T2K2K Datasheet (PDF)
nce60t2k2k.pdf
NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60t2k2i nce60t2k2k.pdf
NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60t2k2i.pdf
NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60td65bt.pdf
PbFreeProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral Description:Using NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce60td60bp.pdf
Pb Free ProductNCE60TD60BP600V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce60td60bt.pdf
Pb Free ProductNCE60TD60BT600V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce60td60bp nce60td60bt.pdf
PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce60td65bt.pdf
Pb Free ProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce60td65bt4.pdf
Pb Free ProductNCE60TD65BT4650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce60td120ut.pdf
PbFreeProduct NCE60TD120UT 1200V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce60td65bp.pdf
Pb Free ProductNCE60TD65BP650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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