NCE65N180 Todos los transistores

 

NCE65N180 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N180
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 194 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

NCE65N180 Datasheet (PDF)

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NCE65N180

NCE65N180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industrial

 0.1. Size:864K  ncepower
nce65n180t.pdf pdf_icon

NCE65N180

NCE65N180TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 0.2. Size:717K  ncepower
nce65n180f.pdf pdf_icon

NCE65N180

NCE65N180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 0.3. Size:725K  ncepower
nce65n180d.pdf pdf_icon

NCE65N180

NCE65N180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 5N60L-TF3T-T | NDD05N50Z | SWD020R03VLT | 2SK1677 | SM3433NHQG | IRHMK57260SE | VBM1151N

 

 
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