All MOSFET. NCE65N180 Datasheet

 

NCE65N180 Datasheet and Replacement


   Type Designator: NCE65N180
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 194 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220
 

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NCE65N180 Datasheet (PDF)

 ..1. Size:670K  ncepower
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NCE65N180

NCE65N180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industrial

 0.1. Size:864K  ncepower
 nce65n180t.pdf pdf_icon

NCE65N180

NCE65N180TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 0.2. Size:717K  ncepower
 nce65n180f.pdf pdf_icon

NCE65N180

NCE65N180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 0.3. Size:725K  ncepower
 nce65n180d.pdf pdf_icon

NCE65N180

NCE65N180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

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Keywords - NCE65N180 MOSFET datasheet

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