NCE65N180 - описание и поиск аналогов

 

Аналоги NCE65N180. Основные параметры


   Наименование производителя: NCE65N180
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 194 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCE65N180

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N180 даташит

 ..1. Size:670K  ncepower
 nce65n180.pdf pdf_icon

NCE65N180

NCE65N180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industrial

 0.1. Size:864K  ncepower
 nce65n180t.pdf pdf_icon

NCE65N180

NCE65N180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

 0.2. Size:717K  ncepower
 nce65n180f.pdf pdf_icon

NCE65N180

NCE65N180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

 0.3. Size:725K  ncepower
 nce65n180d.pdf pdf_icon

NCE65N180

NCE65N180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60P70G , NCE60P82A , NCE60P82AD , NCE60P82AK , NCE60PD05S , NCE60T2K2I , NCE60T2K2K , NCE6525Q , EMB04N03H , NCE65N180D , NCE65N180F , NCE65N180K , NCE65N180T , NCE65N180V , NCE65N1K2D , NCE65N1K2F , NCE65N1K2I .

History: BRCS080N04ZB | APT50M75B2LL

 

 
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