NCE65N460I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE65N460I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: TO251

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NCE65N460I Datasheet (PDF)

..1. Size:731K ncepower
nce65n460i.pdf

NCE65N460IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

5.1. Size:716K ncepower
nce65n460k.pdf

NCE65N460KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

5.2. Size:724K ncepower
nce65n460.pdf

NCE65N460N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industri

5.3. Size:711K ncepower
nce65n460d.pdf

NCE65N460DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

5.4. Size:726K ncepower
nce65n460f.pdf

NCE65N460FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: NCE65N1K2R | APT34F60BG | IPW65R048CFDA | IPZ40N04S5-8R4

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