NCE65N460I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N460I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm

Encapsulados: TO251

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NCE65N460I datasheet

 ..1. Size:731K  ncepower
 nce65n460i.pdf pdf_icon

NCE65N460I

NCE65N460I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr

 5.1. Size:716K  ncepower
 nce65n460k.pdf pdf_icon

NCE65N460I

NCE65N460K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr

 5.2. Size:724K  ncepower
 nce65n460.pdf pdf_icon

NCE65N460I

NCE65N460 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industri

 5.3. Size:711K  ncepower
 nce65n460d.pdf pdf_icon

NCE65N460I

NCE65N460D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE65N330D, NCE65N330F, NCE65N330I, NCE65N330K, NCE65N330R, NCE65N460, NCE65N460D, NCE65N460F, IRFP250N, NCE65N460K, NCE65N520, NCE65N520D, NCE65N520F, NCE65N520I, NCE65N520K, NCE65N760, NCE65N760D