All MOSFET. NCE65N460I Datasheet

 

NCE65N460I Datasheet and Replacement


   Type Designator: NCE65N460I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO251
 

 NCE65N460I substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE65N460I Datasheet (PDF)

 ..1. Size:731K  ncepower
 nce65n460i.pdf pdf_icon

NCE65N460I

NCE65N460IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

 5.1. Size:716K  ncepower
 nce65n460k.pdf pdf_icon

NCE65N460I

NCE65N460KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

 5.2. Size:724K  ncepower
 nce65n460.pdf pdf_icon

NCE65N460I

NCE65N460N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industri

 5.3. Size:711K  ncepower
 nce65n460d.pdf pdf_icon

NCE65N460I

NCE65N460DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

SHOW MORE

Datasheet: NCE65N330D , NCE65N330F , NCE65N330I , NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F , AON7408 , NCE65N460K , NCE65N520 , NCE65N520D , NCE65N520F , NCE65N520I , NCE65N520K , NCE65N760 , NCE65N760D .

History: HM25N03Q | FDM21-05QC | 2SK1476 | GP1M020A060M | IRFS9N60APBF | IPT019N08N5 | IXFE23N100

Keywords - NCE65N460I MOSFET datasheet

 NCE65N460I cross reference
 NCE65N460I equivalent finder
 NCE65N460I lookup
 NCE65N460I substitution
 NCE65N460I replacement

 

 
Back to Top

 


 
.