NCE65N460I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65N460I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 6 ns
Выходная емкость (Cd): 25 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.46 Ohm
Тип корпуса: TO251
Аналог (замена) для NCE65N460I
NCE65N460I Datasheet (PDF)
nce65n460i.pdf
NCE65N460IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr
nce65n460k.pdf
NCE65N460KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr
nce65n460.pdf
NCE65N460N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industri
nce65n460d.pdf
NCE65N460DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr
nce65n460f.pdf
NCE65N460FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr
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