FQA9P25 Todos los transistores

 

FQA9P25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA9P25

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: TO3PN

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FQA9P25 datasheet

 ..1. Size:236K  fairchild semi
 fqa9p25.pdf pdf_icon

FQA9P25

May 2000 TM QFET FQA9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -10.5A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially tailore

 ..2. Size:715K  onsemi
 fqa9p25.pdf pdf_icon

FQA9P25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... SDF04N60 , FQA8N100C , FQA8N90CF109 , FQA90N08 , FQA90N15 , FQA90N15F109 , FQA9N90F109 , FQA9N90CF109 , IRFZ46N , FQAF11N90C , FQAF13N80 , SDD06N70 , FQAF16N50 , FQB11P06 , FQB12P20 , FQB19N20 , SDD05N70 .

History: CPH3327 | TK35A65W | SML40C15N | CPH3442 | HM16N50F | BSL302SN | 2SK2532

 

 

 

 

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