FQA9P25 Specs and Replacement
Type Designator: FQA9P25
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO3PN
FQA9P25 substitution
FQA9P25 datasheet
fqa9p25.pdf
May 2000 TM QFET FQA9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -10.5A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially tailore... See More ⇒
fqa9p25.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: SDF04N60 , FQA8N100C , FQA8N90CF109 , FQA90N08 , FQA90N15 , FQA90N15F109 , FQA9N90F109 , FQA9N90CF109 , IRFZ46N , FQAF11N90C , FQAF13N80 , SDD06N70 , FQAF16N50 , FQB11P06 , FQB12P20 , FQB19N20 , SDD05N70 .
Keywords - FQA9P25 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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