NCE65NF050T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65NF050T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 410 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16 nS
Cossⓘ - Capacitancia de salida: 192 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de NCE65NF050T MOSFET
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NCE65NF050T datasheet
..1. Size:863K ncepower
nce65nf050t.pdf 
NCE65NF050T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 45 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 56 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 101 nC SMPS requirements for PFC
6.1. Size:856K ncepower
nce65nf099t.pdf
NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC
6.2. Size:726K ncepower
nce65nf099ll.pdf
NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A
6.3. Size:782K ncepower
nce65nf023t4.pdf
NCE65NF023T4 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 21 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 96 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 183 nC SMPS requirements for PF
6.4. Size:851K ncepower
nce65nf036t4.pdf
NCE65NF036T4 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 30 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 70 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 125 nC SMPS requirements for PF
6.5. Size:942K ncepower
nce65nf036t.pdf
NCE65NF036T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 30 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 70 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 125 nC SMPS requirements for PFC
6.6. Size:709K ncepower
nce65nf099d.pdf
NCE65NF099D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC
6.7. Size:728K ncepower
nce65nf068ll.pdf
NCE65NF068LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industri
6.8. Size:709K ncepower
nce65nf099v.pdf
NCE65NF099V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC
6.9. Size:726K ncepower
nce65nf068t.pdf
NCE65NF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria
6.10. Size:775K ncepower
nce65nf068d.pdf
NCE65NF068D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria
6.11. Size:727K ncepower
nce65nf099f.pdf
NCE65NF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC
6.12. Size:726K ncepower
nce65nf068v.pdf
NCE65NF068V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria
6.13. Size:738K ncepower
nce65nf068.pdf
NCE65NF068 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industrial
6.14. Size:728K ncepower
nce65nf099.pdf
NCE65NF099 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC/
6.15. Size:912K ncepower
nce65nf023t.pdf
NCE65NF023T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 21 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 96 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 183 nC SMPS requirements for PFC
6.16. Size:709K ncepower
nce65nf068f.pdf
NCE65NF068F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria
Otros transistores... NCE65N900F, NCE65N900I, NCE65N900K, NCE65N900R, NCE65NF023T, NCE65NF023T4, NCE65NF036T, NCE65NF036T4, AON7506, NCE65NF068, NCE65NF068D, NCE65NF068F, NCE65NF068LL, NCE65NF068T, NCE65NF068V, NCE65NF099, NCE65NF099D
