NCE65NF050T - описание и поиск аналогов

 ..1. Size:863K  ncepower
 nce65nf050t.pdf 

NCE65NF050T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 45 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 56 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 101 nC SMPS requirements for PFC

 6.1. Size:856K  ncepower
 nce65nf099t.pdf 

NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 6.2. Size:726K  ncepower
 nce65nf099ll.pdf 

NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A

 6.3. Size:782K  ncepower
 nce65nf023t4.pdf 

NCE65NF023T4 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 21 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 96 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 183 nC SMPS requirements for PF

 6.4. Size:851K  ncepower
 nce65nf036t4.pdf 

NCE65NF036T4 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 30 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 70 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 125 nC SMPS requirements for PF

 6.5. Size:942K  ncepower
 nce65nf036t.pdf 

NCE65NF036T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 30 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 70 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 125 nC SMPS requirements for PFC

 6.6. Size:709K  ncepower
 nce65nf099d.pdf 

NCE65NF099D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 6.7. Size:728K  ncepower
 nce65nf068ll.pdf 

NCE65NF068LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industri

 6.8. Size:709K  ncepower
 nce65nf099v.pdf 

NCE65NF099V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 6.9. Size:726K  ncepower
 nce65nf068t.pdf 

NCE65NF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria

 6.10. Size:775K  ncepower
 nce65nf068d.pdf 

NCE65NF068D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria

 6.11. Size:727K  ncepower
 nce65nf099f.pdf 

NCE65NF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 6.12. Size:726K  ncepower
 nce65nf068v.pdf 

NCE65NF068V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria

 6.13. Size:738K  ncepower
 nce65nf068.pdf 

NCE65NF068 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industrial

 6.14. Size:728K  ncepower
 nce65nf099.pdf 

NCE65NF099 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC/

 6.15. Size:912K  ncepower
 nce65nf023t.pdf 

NCE65NF023T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 21 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 96 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 183 nC SMPS requirements for PFC

 6.16. Size:709K  ncepower
 nce65nf068f.pdf 

NCE65NF068F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 60 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria