NCE65NF050T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65NF050T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 410 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 101 nC
trⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 192 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO247
Аналог (замена) для NCE65NF050T
NCE65NF050T Datasheet (PDF)
nce65nf050t.pdf
NCE65NF050TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 45 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 56 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 101 nCSMPS requirements for PFC
nce65nf099t.pdf
NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
nce65nf099ll.pdf
NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A
nce65nf023t4.pdf
NCE65NF023T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 21 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 96 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 183 nCSMPS requirements for PF
nce65nf036t4.pdf
NCE65NF036T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PF
nce65nf036t.pdf
NCE65NF036TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PFC
nce65nf099d.pdf
NCE65NF099DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
nce65nf068ll.pdf
NCE65NF068LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industri
nce65nf099v.pdf
NCE65NF099VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
nce65nf068t.pdf
NCE65NF068TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
nce65nf068d.pdf
NCE65NF068DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
nce65nf099f.pdf
NCE65NF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
nce65nf068v.pdf
NCE65NF068VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
nce65nf068.pdf
NCE65NF068N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industrial
nce65nf099.pdf
NCE65NF099N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC/
nce65nf023t.pdf
NCE65NF023TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 21 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 96 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 183 nCSMPS requirements for PFC
nce65nf068f.pdf
NCE65NF068FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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