NCE65NF050T Specs and Replacement

Type Designator: NCE65NF050T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 410 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO247

NCE65NF050T substitution

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NCE65NF050T datasheet

 ..1. Size:863K  ncepower
nce65nf050t.pdf pdf_icon

NCE65NF050T

NCE65NF050T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 45 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 56 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 101 nC SMPS requirements for PFC... See More ⇒

 6.1. Size:856K  ncepower
nce65nf099t.pdf pdf_icon

NCE65NF050T

NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC... See More ⇒

 6.2. Size:726K  ncepower
nce65nf099ll.pdf pdf_icon

NCE65NF050T

NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A... See More ⇒

 6.3. Size:782K  ncepower
nce65nf023t4.pdf pdf_icon

NCE65NF050T

NCE65NF023T4 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 21 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 96 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 183 nC SMPS requirements for PF... See More ⇒

Detailed specifications: NCE65N900F, NCE65N900I, NCE65N900K, NCE65N900R, NCE65NF023T, NCE65NF023T4, NCE65NF036T, NCE65NF036T4, AON7506, NCE65NF068, NCE65NF068D, NCE65NF068F, NCE65NF068LL, NCE65NF068T, NCE65NF068V, NCE65NF099, NCE65NF099D

Keywords - NCE65NF050T MOSFET specs

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