NCE70H10F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70H10F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO-220F

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NCE70H10F datasheet

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nce70h10f.pdf pdf_icon

NCE70H10F

http //www.ncepower.com NCE70H10F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =70V,ID =100A Schematic diagram RDS(ON)

 9.1. Size:603K  ncepower
nce70t540d.pdf pdf_icon

NCE70H10F

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 9.2. Size:809K  ncepower
nce70n380k.pdf pdf_icon

NCE70H10F

NCE70N380K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in

 9.3. Size:485K  ncepower
nce70t260i nce70t260k.pdf pdf_icon

NCE70H10F

NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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