Справочник MOSFET. NCE70H10F

 

NCE70H10F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE70H10F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

NCE70H10F Datasheet (PDF)

 ..1. Size:388K  ncepower
nce70h10f.pdfpdf_icon

NCE70H10F

http://www.ncepower.com NCE70H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE70H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =70V,ID =100A Schematic diagram RDS(ON)

 9.1. Size:603K  ncepower
nce70t540d.pdfpdf_icon

NCE70H10F

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 9.2. Size:809K  ncepower
nce70n380k.pdfpdf_icon

NCE70H10F

NCE70N380KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 9.3. Size:485K  ncepower
nce70t260i nce70t260k.pdfpdf_icon

NCE70H10F

NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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History: 2SK3025 | ITA08N65R | APT50M65B2FLL | HCH20NT60V | FTK7N65P | KIA2906A-247 | 2N6798U

 

 
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