NCE70H10F Specs and Replacement

Type Designator: NCE70H10F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-220F

NCE70H10F substitution

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NCE70H10F datasheet

 ..1. Size:388K  ncepower
nce70h10f.pdf pdf_icon

NCE70H10F

http //www.ncepower.com NCE70H10F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =70V,ID =100A Schematic diagram RDS(ON) ... See More ⇒

 9.1. Size:603K  ncepower
nce70t540d.pdf pdf_icon

NCE70H10F

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 9.2. Size:809K  ncepower
nce70n380k.pdf pdf_icon

NCE70H10F

NCE70N380K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in... See More ⇒

 9.3. Size:485K  ncepower
nce70t260i nce70t260k.pdf pdf_icon

NCE70H10F

NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

Detailed specifications: NCE65NF190V, NCE65T130T, NCE65T180V, NCE65T1K9I, NCE65T1K9K, NCE65TF078T, NCE6602N, NCE6890D, STP65NF06, NCE70N100I, NCE70N1K1D, NCE70N1K1F, NCE70N1K1I, NCE70N1K1K, NCE70N1K1R, NCE70N1K4F, NCE70N1K4I

Keywords - NCE70H10F MOSFET specs

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