NCE70N100I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70N100I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-251

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NCE70N100I datasheet

 ..1. Size:390K  ncepower
 nce70n100i.pdf pdf_icon

NCE70N100I

Pb Free Product http //www.ncepower.com NCE70N100I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features S VDS = 100V,ID =57A RDS(ON)

 7.1. Size:794K  ncepower
 nce70n1k4k.pdf pdf_icon

NCE70N100I

NCE70N1K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

 7.2. Size:791K  ncepower
 nce70n1k1k.pdf pdf_icon

NCE70N100I

NCE70N1K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 7.3. Size:870K  ncepower
 nce70n1k4r.pdf pdf_icon

NCE70N100I

NCE70N1K4R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE65T130T, NCE65T180V, NCE65T1K9I, NCE65T1K9K, NCE65TF078T, NCE6602N, NCE6890D, NCE70H10F, IRF1405, NCE70N1K1D, NCE70N1K1F, NCE70N1K1I, NCE70N1K1K, NCE70N1K1R, NCE70N1K4F, NCE70N1K4I, NCE70N1K4K