NCE70N100I Todos los transistores

 

NCE70N100I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE70N100I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-251
 

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NCE70N100I Datasheet (PDF)

 ..1. Size:390K  ncepower
 nce70n100i.pdf pdf_icon

NCE70N100I

Pb Free Producthttp://www.ncepower.com NCE70N100INCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID =57A RDS(ON)

 7.1. Size:794K  ncepower
 nce70n1k4k.pdf pdf_icon

NCE70N100I

NCE70N1K4KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 7.2. Size:791K  ncepower
 nce70n1k1k.pdf pdf_icon

NCE70N100I

NCE70N1K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 7.3. Size:870K  ncepower
 nce70n1k4r.pdf pdf_icon

NCE70N100I

NCE70N1K4RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , NCE6890D , NCE70H10F , NCEP15T14 , NCE70N1K1D , NCE70N1K1F , NCE70N1K1I , NCE70N1K1K , NCE70N1K1R , NCE70N1K4F , NCE70N1K4I , NCE70N1K4K .

History: HGN035N10AL | STD7N80K5

 

 
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