NCE70N100I - Даташиты. Аналоги. Основные параметры

Pb Free Producthttp://www.ncepower.com NCE70N100INCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID =57A RDS(ON)

NCE70N1K4KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

NCE70N1K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

NCE70N1K4RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

NCE70N1K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

NCE70N1K1IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

NCE70N1K4IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

NCE70N1K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

NCE70N1K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

NCE70N1K4FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus