All MOSFET. NCE70N100I Datasheet

 

NCE70N100I Datasheet and Replacement


   Type Designator: NCE70N100I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 111 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-251
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NCE70N100I Datasheet (PDF)

 ..1. Size:390K  ncepower
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NCE70N100I

Pb Free Producthttp://www.ncepower.com NCE70N100INCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID =57A RDS(ON)

 7.1. Size:794K  ncepower
 nce70n1k4k.pdf pdf_icon

NCE70N100I

NCE70N1K4KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 7.2. Size:791K  ncepower
 nce70n1k1k.pdf pdf_icon

NCE70N100I

NCE70N1K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 7.3. Size:870K  ncepower
 nce70n1k4r.pdf pdf_icon

NCE70N100I

NCE70N1K4RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

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