NCE70N1K4R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70N1K4R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 4.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 17 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: SOT-223

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NCE70N1K4R datasheet

 ..1. Size:870K  ncepower
 nce70n1k4r.pdf pdf_icon

NCE70N1K4R

NCE70N1K4R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

 5.1. Size:794K  ncepower
 nce70n1k4k.pdf pdf_icon

NCE70N1K4R

NCE70N1K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

 5.2. Size:814K  ncepower
 nce70n1k4i.pdf pdf_icon

NCE70N1K4R

NCE70N1K4I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

 5.3. Size:803K  ncepower
 nce70n1k4f.pdf pdf_icon

NCE70N1K4R

NCE70N1K4F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE70N1K1D, NCE70N1K1F, NCE70N1K1I, NCE70N1K1K, NCE70N1K1R, NCE70N1K4F, NCE70N1K4I, NCE70N1K4K, K2611, NCE70N290, NCE70N290D, NCE70N290F, NCE70N290I, NCE70N290K, NCE70N380, NCE70N380D, NCE70N380F