All MOSFET. NCE70N1K4R Datasheet

 

NCE70N1K4R MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE70N1K4R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT-223

 NCE70N1K4R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE70N1K4R Datasheet (PDF)

 ..1. Size:870K  ncepower
nce70n1k4r.pdf

NCE70N1K4R
NCE70N1K4R

NCE70N1K4RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 5.1. Size:794K  ncepower
nce70n1k4k.pdf

NCE70N1K4R
NCE70N1K4R

NCE70N1K4KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 5.2. Size:814K  ncepower
nce70n1k4i.pdf

NCE70N1K4R
NCE70N1K4R

NCE70N1K4IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 5.3. Size:803K  ncepower
nce70n1k4f.pdf

NCE70N1K4R
NCE70N1K4R

NCE70N1K4FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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