Справочник MOSFET. NCE70N1K4R

 

NCE70N1K4R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE70N1K4R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 4.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 17 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: SOT-223
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE70N1K4R Datasheet (PDF)

 ..1. Size:870K  ncepower
 nce70n1k4r.pdf pdf_icon

NCE70N1K4R

NCE70N1K4RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 5.1. Size:794K  ncepower
 nce70n1k4k.pdf pdf_icon

NCE70N1K4R

NCE70N1K4KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 5.2. Size:814K  ncepower
 nce70n1k4i.pdf pdf_icon

NCE70N1K4R

NCE70N1K4IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 5.3. Size:803K  ncepower
 nce70n1k4f.pdf pdf_icon

NCE70N1K4R

NCE70N1K4FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE70N1K1D , NCE70N1K1F , NCE70N1K1I , NCE70N1K1K , NCE70N1K1R , NCE70N1K4F , NCE70N1K4I , NCE70N1K4K , IRF9640 , NCE70N290 , NCE70N290D , NCE70N290F , NCE70N290I , NCE70N290K , NCE70N380 , NCE70N380D , NCE70N380F .

 

 
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