NCE8290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE8290
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 82 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 85.7 nC
   trⓘ - Tiempo de subida: 54.3 nS
   Cossⓘ - Capacitancia de salida: 630.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET NCE8290

NCE8290 Datasheet (PDF)

..1. Size:375K ncepower
nce8290.pdf

Pb Free Producthttp://www.ncepower.com NCE8290NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =90A RDS(ON)

0.1. Size:353K ncepower
nce8290ac.pdf

http://www.ncepower.com NCE8290ACNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON)

0.2. Size:352K ncepower
nce8290b.pdf

Pb Free Producthttp://www.ncepower.com NCE8290BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =90A Schematic diagram RDS(ON)

8.1. Size:612K ncepower
nce8295ag.pdf

http://www.ncepower.comNCE8295AGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE8295AG uses advanced trench technology and design V =82V,I =95ADS Dto provide excellent R with low gate charge. This device is R

8.2. Size:419K ncepower
nce8295ak.pdf

Pb Free Producthttp://www.ncepower.com NCE8295AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =95A RDS(ON)

8.3. Size:687K ncepower
nce8295ai.pdf

Pb Free Producthttp://www.ncepower.comNCE8295AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE8295AI uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =82V,I =95ADS DR

8.4. Size:351K ncepower
nce8295a.pdf

Pb Free Producthttp://www.ncepower.com NCE8295ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

8.5. Size:393K ncepower
nce8295ad.pdf

Pb Free Producthttp://www.ncepower.com NCE8295ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features Schematic diagram VDS =82V,ID =95A RDS(ON)

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