NCE8290 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE8290 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE8290

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 82 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54.3 nS

Cossⓘ - Capacitancia de salida: 630.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO-220

Búsqueda de reemplazo de NCE8290 MOSFET

- Selecciónⓘ de transistores por parámetros

NCE8290 datasheet

..1. Size:375K ncepower
nce8290.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =90A RDS(ON)

0.1. Size:353K ncepower
nce8290ac.pdf pdf_icon

http //www.ncepower.com NCE8290AC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON)

0.2. Size:352K ncepower
nce8290b.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE8290B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =90A Schematic diagram RDS(ON)

8.1. Size:612K ncepower
nce8295ag.pdf pdf_icon

http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R

Otros transistores... NCE70T900R, NCE72R60D, NCE75H21, NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T, NCE75H35TC, IRF630, NCE8290B, NCE8295AG, NCE8295AI, NCE82H140, NCE82H140LL, NCE82H160, NCE82H160D, NCE85H21TC

NCE8290 Todos los transistores