NCE8290 Specs and Replacement

Type Designator: NCE8290

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54.3 nS

Cossⓘ - Output Capacitance: 630.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-220

NCE8290 substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE8290 datasheet

 ..1. Size:375K  ncepower
nce8290.pdf pdf_icon

NCE8290

Pb Free Product http //www.ncepower.com NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =90A RDS(ON) ... See More ⇒

 0.1. Size:353K  ncepower
nce8290ac.pdf pdf_icon

NCE8290

http //www.ncepower.com NCE8290AC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON) ... See More ⇒

 0.2. Size:352K  ncepower
nce8290b.pdf pdf_icon

NCE8290

Pb Free Product http //www.ncepower.com NCE8290B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =90A Schematic diagram RDS(ON) ... See More ⇒

 8.1. Size:612K  ncepower
nce8295ag.pdf pdf_icon

NCE8290

http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R ... See More ⇒

Detailed specifications: NCE70T900R, NCE72R60D, NCE75H21, NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T, NCE75H35TC, IRF630, NCE8290B, NCE8295AG, NCE8295AI, NCE82H140, NCE82H140LL, NCE82H160, NCE82H160D, NCE85H21TC

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.